Application of Bond-valence Modelling Method for Illustration of Point Defects in Semiconductors
Point defects in semiconductors cause many considerable behaviours of these materials. This article introduces a procedure for modelling of point defects using a structural approach often referred to as a bond-valence method. This method minimalizes the computation cost and facilitates a contruction...
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| Format: | Article |
| Language: | English |
| Published: |
H. : ĐHQGHN
2018
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| Subjects: | |
| Online Access: | http://repository.vnu.edu.vn/handle/VNU_123/62915 |
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| Institution: | Vietnam National University, Hanoi |
| Language: | English |
| Summary: | Point defects in semiconductors cause many considerable behaviours of these materials. This article introduces a procedure for modelling of point defects using a structural approach often referred to as a bond-valence method. This method minimalizes the computation cost and facilitates a contruction of complex 3D images illustrating the point defects, including the charge distribution map at contact interfaces. This method also provides a convenient way to estimate the carrier density and defect locations, it visualizes a dynamics of valence relocation under thermal fluctuation |
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