Application of Bond-valence Modelling Method for Illustration of Point Defects in Semiconductors
Point defects in semiconductors cause many considerable behaviours of these materials. This article introduces a procedure for modelling of point defects using a structural approach often referred to as a bond-valence method. This method minimalizes the computation cost and facilitates a contruction...
Saved in:
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
H. : ĐHQGHN
2018
|
| Subjects: | |
| Online Access: | http://repository.vnu.edu.vn/handle/VNU_123/62915 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Vietnam National University, Hanoi |
| Language: | English |
| id |
oai:112.137.131.14:VNU_123-62915 |
|---|---|
| record_format |
dspace |
| spelling |
oai:112.137.131.14:VNU_123-629152018-10-09T08:25:38Z Application of Bond-valence Modelling Method for Illustration of Point Defects in Semiconductors Hoang, Nam Nhat Bond-valence Defects Modelling Tools Point defects in semiconductors cause many considerable behaviours of these materials. This article introduces a procedure for modelling of point defects using a structural approach often referred to as a bond-valence method. This method minimalizes the computation cost and facilitates a contruction of complex 3D images illustrating the point defects, including the charge distribution map at contact interfaces. This method also provides a convenient way to estimate the carrier density and defect locations, it visualizes a dynamics of valence relocation under thermal fluctuation 2018-10-09T08:25:38Z 2018-10-09T08:25:38Z 2018 Article Hoang, N. N. (2018). Application of Bond-valence Modelling Method for Illustration of Point Defects in Semiconductors. VNU Journal of Science: Mathematics – Physics, Vol. 34, No. 3 (2018), 85-89 2588-1124 http://repository.vnu.edu.vn/handle/VNU_123/62915 en VNU Journal of Science; application/pdf H. : ĐHQGHN |
| institution |
Vietnam National University, Hanoi |
| building |
VNU Library & Information Center |
| country |
Vietnam |
| collection |
VNU Digital Repository |
| language |
English |
| topic |
Bond-valence Defects Modelling Tools |
| spellingShingle |
Bond-valence Defects Modelling Tools Hoang, Nam Nhat Application of Bond-valence Modelling Method for Illustration of Point Defects in Semiconductors |
| description |
Point defects in semiconductors cause many considerable behaviours of these materials. This article introduces a procedure for modelling of point defects using a structural approach often referred to as a bond-valence method. This method minimalizes the computation cost and facilitates a contruction of complex 3D images illustrating the point defects, including the charge distribution map at contact interfaces. This method also provides a convenient way to estimate the carrier density and defect locations, it visualizes a dynamics of valence relocation under thermal fluctuation |
| format |
Article |
| author |
Hoang, Nam Nhat |
| author_facet |
Hoang, Nam Nhat |
| author_sort |
Hoang, Nam Nhat |
| title |
Application of Bond-valence Modelling Method for Illustration of Point Defects in Semiconductors |
| title_short |
Application of Bond-valence Modelling Method for Illustration of Point Defects in Semiconductors |
| title_full |
Application of Bond-valence Modelling Method for Illustration of Point Defects in Semiconductors |
| title_fullStr |
Application of Bond-valence Modelling Method for Illustration of Point Defects in Semiconductors |
| title_full_unstemmed |
Application of Bond-valence Modelling Method for Illustration of Point Defects in Semiconductors |
| title_sort |
application of bond-valence modelling method for illustration of point defects in semiconductors |
| publisher |
H. : ĐHQGHN |
| publishDate |
2018 |
| url |
http://repository.vnu.edu.vn/handle/VNU_123/62915 |
| _version_ |
1680967552333774848 |