Application of Bond-valence Modelling Method for Illustration of Point Defects in Semiconductors

• المؤلف الرئيسي: Hoang, Nam Nhat
• التنسيق: مقال
• اللغة: English
• منشور في: H. : ĐHQGHN 2018
• الموضوعات: Bond-valence; Defects; Modelling; Tools
• الوصول للمادة أونلاين: http://repository.vnu.edu.vn/handle/VNU_123/62915

Point defects in semiconductors cause many considerable behaviours of these materials. This article introduces a procedure for modelling of point defects using a structural approach often referred to as a bond-valence method. This method minimalizes the computation cost and facilitates a contruction...