Measurement of the minority carrier lifetime of PbxSn1-xTe thin films using the method of photoconductive decay
The minority carrier lifetime of PbxSn1-x Te thin films were determined using the photoconductive decay set-up. The fabricated thin film samples had a concentration of X = 0.2, 0.5, and 0.8. Each sample was illuminated by a stroboscope with a frequency of 3000 revolutions per minute from which the p...
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| Main Authors: | , |
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| Format: | text |
| Language: | English |
| Published: |
Animo Repository
1996
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| Online Access: | https://animorepository.dlsu.edu.ph/etd_bachelors/4157 |
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| Institution: | De La Salle University |
| Language: | English |
| Summary: | The minority carrier lifetime of PbxSn1-x Te thin films were determined using the photoconductive decay set-up. The fabricated thin film samples had a concentration of X = 0.2, 0.5, and 0.8. Each sample was illuminated by a stroboscope with a frequency of 3000 revolutions per minute from which the photoconductive decay was observed using a Palmscope digital storage oscilloscope interfaced with a computer. The voltage versus time characteristic of the sample was observed at a time exposure of 1 to 5 usec. From the obtained graph, the lifetime of each sample was then computed. At X = 0.2, the minority carrier lifetime of samples 3a, 4a, 5a and 6a was found to be 0.258 used, 0.229 usec, 0.330 usec and 0.305 usec. For x = 0.5 and 0.8, the minority carrier lifetime of the samples were 0.28 usec and 0.27 usec respectively. |
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