Measurement of the minority carrier lifetime of PbxSn1-xTe thin films using the method of photoconductive decay

• Main Authors: Cua, Alvin T., Lau, John Michael A.
• Format: text
• Language: English
• Published: Animo Repository 1996
• Subjects: Thin films; Photoconductivity; Physics
• Online Access: https://animorepository.dlsu.edu.ph/etd_bachelors/4157
• Institution: De La Salle University

The minority carrier lifetime of PbxSn1-x Te thin films were determined using the photoconductive decay set-up. The fabricated thin film samples had a concentration of X = 0.2, 0.5, and 0.8. Each sample was illuminated by a stroboscope with a frequency of 3000 revolutions per minute from which the photoconductive decay was observed using a Palmscope digital storage oscilloscope interfaced with a computer. The voltage versus time characteristic of the sample was observed at a time exposure of 1 to 5 usec. From the obtained graph, the lifetime of each sample was then computed. At X = 0.2, the minority carrier lifetime of samples 3a, 4a, 5a and 6a was found to be 0.258 used, 0.229 usec, 0.330 usec and 0.305 usec. For x = 0.5 and 0.8, the minority carrier lifetime of the samples were 0.28 usec and 0.27 usec respectively.