Characterization of fabricated polythiophene thin films by transverse R-T, sem and FTIR
Characterization of fabricated samples of PT films were done using transverse resistance measurement, i.e. resistance measured normal to the surface of the films, from 80-303 Kelvin, SEM for surface morphology observation and FTIR for IR-spectra studies. Results show that samples three and four exhi...
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| Main Authors: | , |
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| Format: | text |
| Language: | English |
| Published: |
Animo Repository
1998
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| Subjects: | |
| Online Access: | https://animorepository.dlsu.edu.ph/etd_bachelors/4501 |
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| Institution: | De La Salle University |
| Language: | English |
| Summary: | Characterization of fabricated samples of PT films were done using transverse resistance measurement, i.e. resistance measured normal to the surface of the films, from 80-303 Kelvin, SEM for surface morphology observation and FTIR for IR-spectra studies. Results show that samples three and four exhibit semiconducting-type properties based on their Resistance vs. Temperature graphs, where the resistance of the films decreases as temperature increases. It could also be observed from the SEM data that samples which show semiconducting-type properties (samples 3 & 4) have a uniform surface morphology. IR-spectra studies show that the samples all exhibited some peaks near 1400 cm 4 which are the following: for samples one, two and three at 1429.30 cm 4, sample four at 1434.42 cm 4, sample five at 1444.67 cm 4. |
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