Investigation of the terahertz radiation mechanism in gallium arsenide on Si substrate

• Main Authors: Muldera, Joselito E., Balgos, Ma. Herminia, Lopez, Lorenzo, Jr., Prieto, Elizabeth Anne, Tumangil, Mae Agatha, Gonzales, Karl Cedric, Simon, Rhenish C., Catindig, Gerald, Sadia, Cyril P., Somintac, Armando S., Salvador, Arnel A., Estacio, Elmer S.
• Format: text
• Published: Animo Repository 2016
• Subjects: Submillimeter waves; Gallium arsenide; Silicon; Time-resolved spectroscopy; Molecular beam epitaxy; Physics
• Online Access: https://animorepository.dlsu.edu.ph/faculty_research/11584
• Institution: De La Salle University

Terahertz (THz) radiation was observed in the reflection geometry from femtosecond laser-excited SI GaAs films deposited on Si substrates (SI-GaAs/Si). The THz spectra were compared to those of bare semi- insulating (SI) GaAs and InAs samples with doping type. The results show that the SI-GaAs/Si fi...