Pulsed-laser deposited TiN2 coatings on silicon substrate

Pulsed-laser deposited TiN2 coatings on silicon substrate

In this study, the pulsed laser deposition technique was used to deposit TiN2 coatings on silicon. Forty samples were studied. From the results of the SEM and EDX, the optimum parameters for deposition is deposition for two hours with vacuum pressure of 5x10-4 Torr, nitrogen gas flow between 2 to 10...

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Bibliographic Details
Main Authors: Ortile, Alva Lolit, Law, Kelwin, Yu Eng Hong, Jacqueline, Santos, Gil Nonato C., Quiroga, Reuben V., Garcia, Wilson O.
Format: text
Published: Animo Repository 2002
Subjects:
Titanium nitride
Pulsed laser deposition
Silicon
Coatings
Physics
Online Access:https://animorepository.dlsu.edu.ph/faculty_research/12788
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Institution: De La Salle University
Description
Summary:In this study, the pulsed laser deposition technique was used to deposit TiN2 coatings on silicon. Forty samples were studied. From the results of the SEM and EDX, the optimum parameters for deposition is deposition for two hours with vacuum pressure of 5x10-4 Torr, nitrogen gas flow between 2 to 10 mbar, substrate temperature of 400°C, pulse wavelength of 1064 nm, pulse excitation energy of 150 mJ, and target to substrate distance of 30 mm. EDX confirmed an atomic composition of 37.419% titanium and 61.85% nitrogen deposited on silicon.

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