Pulsed-laser deposited TiN2 coatings on silicon substrate
In this study, the pulsed laser deposition technique was used to deposit TiN2 coatings on silicon. Forty samples were studied. From the results of the SEM and EDX, the optimum parameters for deposition is deposition for two hours with vacuum pressure of 5x10-4 Torr, nitrogen gas flow between 2 to 10...
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2002
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oai:animorepository.dlsu.edu.ph:faculty_research-147282024-07-29T02:55:55Z Pulsed-laser deposited TiN2 coatings on silicon substrate Ortile, Alva Lolit Law, Kelwin Yu Eng Hong, Jacqueline Santos, Gil Nonato C. Quiroga, Reuben V. Garcia, Wilson O. In this study, the pulsed laser deposition technique was used to deposit TiN2 coatings on silicon. Forty samples were studied. From the results of the SEM and EDX, the optimum parameters for deposition is deposition for two hours with vacuum pressure of 5x10-4 Torr, nitrogen gas flow between 2 to 10 mbar, substrate temperature of 400°C, pulse wavelength of 1064 nm, pulse excitation energy of 150 mJ, and target to substrate distance of 30 mm. EDX confirmed an atomic composition of 37.419% titanium and 61.85% nitrogen deposited on silicon. 2002-01-01T08:00:00Z text https://animorepository.dlsu.edu.ph/faculty_research/12788 Faculty Research Work Animo Repository Titanium nitride Pulsed laser deposition Silicon Coatings Physics |
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Titanium nitride Pulsed laser deposition Silicon Coatings Physics |
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Titanium nitride Pulsed laser deposition Silicon Coatings Physics Ortile, Alva Lolit Law, Kelwin Yu Eng Hong, Jacqueline Santos, Gil Nonato C. Quiroga, Reuben V. Garcia, Wilson O. Pulsed-laser deposited TiN2 coatings on silicon substrate |
| description |
In this study, the pulsed laser deposition technique was used to deposit TiN2 coatings on silicon. Forty samples were studied. From the results of the SEM and EDX, the optimum parameters for deposition is deposition for two hours with vacuum pressure of 5x10-4 Torr, nitrogen gas flow between 2 to 10 mbar, substrate temperature of 400°C, pulse wavelength of 1064 nm, pulse excitation energy of 150 mJ, and target to substrate distance of 30 mm. EDX confirmed an atomic composition of 37.419% titanium and 61.85% nitrogen deposited on silicon. |
| format |
text |
| author |
Ortile, Alva Lolit Law, Kelwin Yu Eng Hong, Jacqueline Santos, Gil Nonato C. Quiroga, Reuben V. Garcia, Wilson O. |
| author_facet |
Ortile, Alva Lolit Law, Kelwin Yu Eng Hong, Jacqueline Santos, Gil Nonato C. Quiroga, Reuben V. Garcia, Wilson O. |
| author_sort |
Ortile, Alva Lolit |
| title |
Pulsed-laser deposited TiN2 coatings on silicon substrate |
| title_short |
Pulsed-laser deposited TiN2 coatings on silicon substrate |
| title_full |
Pulsed-laser deposited TiN2 coatings on silicon substrate |
| title_fullStr |
Pulsed-laser deposited TiN2 coatings on silicon substrate |
| title_full_unstemmed |
Pulsed-laser deposited TiN2 coatings on silicon substrate |
| title_sort |
pulsed-laser deposited tin2 coatings on silicon substrate |
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Animo Repository |
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2002 |
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https://animorepository.dlsu.edu.ph/faculty_research/12788 |
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1806511039866470400 |