Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application
Bi2S3 Nanowires was successfully fabricated using Horizontal Vapor Phase Crystal growth technique for photosensor application. A 35 mg of bismuth sulfide powder with purity rate of 99.9% was utilized. The growth temperature was varied at 600 oC to 1200 oC with growth time of 4 to 8 hours where the r...
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| Main Authors: | , , |
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| Format: | text |
| Published: |
Animo Repository
2012
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| Subjects: | |
| Online Access: | https://animorepository.dlsu.edu.ph/faculty_research/13001 |
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| Institution: | De La Salle University |