Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application

Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application

Bi2S3 Nanowires was successfully fabricated using Horizontal Vapor Phase Crystal growth technique for photosensor application. A 35 mg of bismuth sulfide powder with purity rate of 99.9% was utilized. The growth temperature was varied at 600 oC to 1200 oC with growth time of 4 to 8 hours where the r...

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Main Authors: Llona, Bheim Mendez, Santos, Gil Nonato C., Quiroga, Reuben V.
Format: text
Published: Animo Repository 2012
Subjects:
Nanowires
Bismuth
Physics
Online Access:https://animorepository.dlsu.edu.ph/faculty_research/13001
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Institution: De La Salle University
id oai:animorepository.dlsu.edu.ph:faculty_research-14729
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spelling oai:animorepository.dlsu.edu.ph:faculty_research-147292024-07-17T07:37:33Z Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application Llona, Bheim Mendez Santos, Gil Nonato C. Quiroga, Reuben V. Bi2S3 Nanowires was successfully fabricated using Horizontal Vapor Phase Crystal growth technique for photosensor application. A 35 mg of bismuth sulfide powder with purity rate of 99.9% was utilized. The growth temperature was varied at 600 oC to 1200 oC with growth time of 4 to 8 hours where the ramp time was set at 60 minutes. The as-prepared products were characterized using an SEM, EDX, and Applied Spectral Imaging. The optimum growth was at 1200 C deposited on zone 2 on a fused silica tube. The energy band gap was 2.58 eV which has blue spectra. The nanowires demonstrated its functionality as photosensor in a metalsemiconductor-metal planar structure based on the voltage time spectra obtained. 2012-08-01T07:00:00Z text https://animorepository.dlsu.edu.ph/faculty_research/13001 Faculty Research Work Animo Repository Nanowires Bismuth Physics
institution De La Salle University
building De La Salle University Library
continent Asia
country Philippines
Philippines
content_provider De La Salle University Library
collection DLSU Institutional Repository
topic Nanowires
Bismuth
Physics
spellingShingle Nanowires
Bismuth
Physics
Llona, Bheim Mendez
Santos, Gil Nonato C.
Quiroga, Reuben V.
Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application
description Bi2S3 Nanowires was successfully fabricated using Horizontal Vapor Phase Crystal growth technique for photosensor application. A 35 mg of bismuth sulfide powder with purity rate of 99.9% was utilized. The growth temperature was varied at 600 oC to 1200 oC with growth time of 4 to 8 hours where the ramp time was set at 60 minutes. The as-prepared products were characterized using an SEM, EDX, and Applied Spectral Imaging. The optimum growth was at 1200 C deposited on zone 2 on a fused silica tube. The energy band gap was 2.58 eV which has blue spectra. The nanowires demonstrated its functionality as photosensor in a metalsemiconductor-metal planar structure based on the voltage time spectra obtained.
format text
author Llona, Bheim Mendez
Santos, Gil Nonato C.
Quiroga, Reuben V.
author_facet Llona, Bheim Mendez
Santos, Gil Nonato C.
Quiroga, Reuben V.
author_sort Llona, Bheim Mendez
title Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application
title_short Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application
title_full Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application
title_fullStr Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application
title_full_unstemmed Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application
title_sort bi2s3 nanowires fabricated via hvpc growth technique for photosensor application
publisher Animo Repository
publishDate 2012
url https://animorepository.dlsu.edu.ph/faculty_research/13001
_version_ 1808616884489158656

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