Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application
Bi2S3 Nanowires was successfully fabricated using Horizontal Vapor Phase Crystal growth technique for photosensor application. A 35 mg of bismuth sulfide powder with purity rate of 99.9% was utilized. The growth temperature was varied at 600 oC to 1200 oC with growth time of 4 to 8 hours where the r...
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| Main Authors: | , , |
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| Format: | text |
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Animo Repository
2012
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| Subjects: | |
| Online Access: | https://animorepository.dlsu.edu.ph/faculty_research/13001 |
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| Institution: | De La Salle University |
| Summary: | Bi2S3 Nanowires was successfully fabricated using Horizontal Vapor Phase Crystal growth technique for photosensor application. A 35 mg of bismuth sulfide powder with purity rate of 99.9% was utilized. The growth temperature was varied at 600 oC to 1200 oC with growth time of 4 to 8 hours where the ramp time was set at 60 minutes. The as-prepared products were characterized using an SEM, EDX, and Applied Spectral Imaging. The optimum growth was at 1200 C deposited on zone 2 on a fused silica tube. The energy band gap was 2.58 eV which has blue spectra. The nanowires demonstrated its functionality as photosensor in a metalsemiconductor-metal planar structure based on the voltage time spectra obtained. |
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