Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application

• Main Authors: Llona, Bheim Mendez, Santos, Gil Nonato C., Quiroga, Reuben V.
• Format: text
• Published: Animo Repository 2012
• Subjects: Nanowires; Bismuth; Physics
• Online Access: https://animorepository.dlsu.edu.ph/faculty_research/13001
• Institution: De La Salle University

Bi2S3 Nanowires was successfully fabricated using Horizontal Vapor Phase Crystal growth technique for photosensor application. A 35 mg of bismuth sulfide powder with purity rate of 99.9% was utilized. The growth temperature was varied at 600 oC to 1200 oC with growth time of 4 to 8 hours where the r...