Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation

• Main Authors: Sadia, Cyril P., Lopez, Lorenzo P., delos Santos, Ramon M., Muldera, Joselito E., De Los Reyes, Alexander E., Tumanguil, Mae Agatha C., Que, Christopher T., Mag-usara, Valynn Katrine, Tani, Masahiko, Somintac, Armando S., Estacio, Elmer S., Salvador, Arnel A.
• Format: text
• Published: Animo Repository 2018
• Subjects: Compound semiconductors; Terahertz spectroscopy; Indium arsenide; Molecular beam epitaxy; Physics
• Online Access: https://animorepository.dlsu.edu.ph/faculty_research/3486; https://animorepository.dlsu.edu.ph/context/faculty_research/article/4488/type/native/viewcontent/j.tsf.2017.12.022
• Institution: De La Salle University

We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the context of 1.55 μm femtosecond laser-excited THz emission efficiency. The presence of p-InAs is confirmed via scanning electron microscopy and X-ray diffraction. Using a GaAs buffer layer, the epitaxial growth of p-InAs layers was successfully achieved. Initiating GaAs deposition by growth interruption, we find that GaAs adheres to the GaSb substrate and provides a quasi-planar surface for the subsequent layers. We also find a significant enhancement in the THz radiation intensity of p-InAs films that is approximately twice compared to that of bulk p-InAs for 1.55 μm wavelength. © 2018 Elsevier B.V.