Low temperature direct wafer bonding of GaAs to Si via plasma activation

• Main Authors: Xu, D. W., Fitzgerald, Eugene A., Yeo, Chiew Yong, Yoon, Soon Fatt
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2014
• 主題: DRNTU::Science::Physics
• 在線閱讀: https://hdl.handle.net/10356/100308; http://hdl.handle.net/10220/18646
• 機構: Nanyang Technological University

The present work seeks to demonstrate the elegance and simplicity of monolithic integration via plasma-activated direct wafer bonding. Two-inch gallium arsenide and silicon wafers were directly bonded through argon plasma activation. The highest specific bond energy was found for plasma conditions o...