X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices
We report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measuredx-ray diffraction rocking curves of the InAs/GaAs quantum-dot...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100397 http://hdl.handle.net/10220/18015 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| id |
sg-ntu-dr.10356-100397 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-1003972020-03-07T14:00:34Z X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices Xu, S. J. Wang, H. Li, Q. Xie, M. H. Wang, X. C. Fan, Weijun Feng, S. L. School of Electrical and Electronic Engineering Department of Physics and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Department of Electrical Engineering, Centre for Optoelectronics, National University of Singapore DRNTU::Engineering::Electrical and electronic engineering We report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measuredx-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlatticesannealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In–Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated. Published version 2013-12-04T04:03:09Z 2019-12-06T20:21:46Z 2013-12-04T04:03:09Z 2019-12-06T20:21:46Z 2000 2000 Journal Article Xu, S. J., Wang, H., Li, Q., Xie, M. H., Wang, X. C., Fan, W., & Feng, S. L. (2000). X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices. Applied physics letters, 77(14), 2130. 0003-6951 https://hdl.handle.net/10356/100397 http://hdl.handle.net/10220/18015 10.1063/1.1314298 en Applied physics letters © 2000 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.1314298]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| country |
Singapore |
| collection |
DR-NTU |
| language |
English |
| topic |
DRNTU::Engineering::Electrical and electronic engineering |
| spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering Xu, S. J. Wang, H. Li, Q. Xie, M. H. Wang, X. C. Fan, Weijun Feng, S. L. X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| description |
We report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measuredx-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlatticesannealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In–Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Xu, S. J. Wang, H. Li, Q. Xie, M. H. Wang, X. C. Fan, Weijun Feng, S. L. |
| format |
Article |
| author |
Xu, S. J. Wang, H. Li, Q. Xie, M. H. Wang, X. C. Fan, Weijun Feng, S. L. |
| author_sort |
Xu, S. J. |
| title |
X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| title_short |
X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| title_full |
X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| title_fullStr |
X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| title_full_unstemmed |
X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices |
| title_sort |
x-ray diffraction and optical characterization of interdiffusion in self-assembled inas/gaas quantum-dot superlattices |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/100397 http://hdl.handle.net/10220/18015 |
| _version_ |
1681037202607308800 |