Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack

• Main Authors: Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Kumar, Chandramohan Manoj, Teo, Khoon Leng, Ranjan, Kumud
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2015
• Subjects: DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/100489; http://hdl.handle.net/10220/25701
• Institution: Nanyang Technological University

We have demonstrated 0.15-µm-gate-length AlGaN/GaN high-electron-mobility transistors (HEMTs) with direct-current (DC) and microwave performances for the first time using a complementary metal–oxide–semiconductor (CMOS)-compatible non-gold metal stack. Si/Ta-based ohmic contact exhibited low contact resistance (Rc=0.24 Ω.mm) with smooth surface morphology. The fabricated GaN HEMTs exhibited gmmax=250 mS/mm, fT/fmax=39/39 GHz, B Vgd=90 V, and drain current collapse <10%. The device Johnson's figure of merit (J-FOM = fT × B Vgd) is in the range between 3.51 to 3.83 THz.V which are comparable to those of other reported GaN HEMTs on Si with a conventional III–V gold-based ohmic contact process. Our results demonstrate the feasibility of realizing high-performance submicron GaN-on-silicon HEMTs using a Si CMOS-compatible metal stack.