Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers

• المؤلفون الرئيسيون: Liu, C. Y., Teo, Ronnie J. W., Yuan, S., Yoon, Soon Fatt, Fan, Weijun
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100600; http://hdl.handle.net/10220/17972

InGaAsN triple-quantum-well (TQW) 4-μm ridge waveguide (RWG) lasers were fabricated using pulsed anodic oxidation. High output power of 290 mW (both facets), low transparency current density of 389 A/cm2 (equivalent to 130 A/cm2/well) and high characteristic temperature (T0) of 157.2 K were obta...