Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers
InGaAsN triple-quantum-well (TQW) 4-μm ridge waveguide (RWG) lasers were fabricated using pulsed anodic oxidation. High output power of 290 mW (both facets), low transparency current density of 389 A/cm2 (equivalent to 130 A/cm2/well) and high characteristic temperature (T0) of 157.2 K were obta...
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Main Authors: | Liu, C. Y., Teo, Ronnie J. W., Yuan, S., Yoon, Soon Fatt, Fan, Weijun |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/100600 http://hdl.handle.net/10220/17972 |
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Institution: | Nanyang Technological University |
Language: | English |
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