Pressure-Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation
© 2019 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA. We present the effects of In−N distribution and high pressure on the zincblende phase (0–5 GPa) of In x Ga 1−x As 0.963 N 0.037 (x=0.074, 0.111 and 0.148). Structural, electronic, and optical properties are analyzed, and it is...
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| Main Authors: | , , , |
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| Format: | Journal |
| Published: |
2019
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| Subjects: | |
| Online Access: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85063615771&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/65493 |
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| Institution: | Chiang Mai University |