Pressure-Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation

© 2019 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA. We present the effects of In−N distribution and high pressure on the zincblende phase (0–5 GPa) of In x Ga 1−x As 0.963 N 0.037 (x=0.074, 0.111 and 0.148). Structural, electronic, and optical properties are analyzed, and it is...

Full description

Saved in:
Bibliographic Details
Main Authors: Prayoonsak Pluengphon, Pornsiri Wanarattikan, Thiti Bovornratanaraks, Burapat Inceesungvorn
Format: Journal
Published: 2019
Subjects:
Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85063615771&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/65493
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Chiang Mai University
Be the first to leave a comment!
You must be logged in first