A new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures

• 主要作者: Lau, Wai Shing.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/100632; http://hdl.handle.net/10220/11035
• 機構: Nanyang Technological University

Historically, there has been a controversy regarding whether the leakage current versus voltage (I-V) relationship is governed by the Schottky mechanism or by the Poole-Frenkel (P-F) mechanism for several decades. For the P-F mechanism, the I-V characteristics is expected to be symmetrical. In this...