A new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures

Historically, there has been a controversy regarding whether the leakage current versus voltage (I-V) relationship is governed by the Schottky mechanism or by the Poole-Frenkel (P-F) mechanism for several decades. For the P-F mechanism, the I-V characteristics is expected to be symmetrical. In this...

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Main Author:	Lau, Wai Shing.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/100632 http://hdl.handle.net/10220/11035
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-100632
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spelling	sg-ntu-dr.10356-1006322020-03-07T14:00:30Z A new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures Lau, Wai Shing. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Historically, there has been a controversy regarding whether the leakage current versus voltage (I-V) relationship is governed by the Schottky mechanism or by the Poole-Frenkel (P-F) mechanism for several decades. For the P-F mechanism, the I-V characteristics is expected to be symmetrical. In this paper, the author points out that there is an extra mechanism for symmetrical I-V characteristics. Published version 2013-07-09T02:26:53Z 2019-12-06T20:25:41Z 2013-07-09T02:26:53Z 2019-12-06T20:25:41Z 2012 2012 Journal Article Lau, W. S. (2012). A New Mechanism of Symmetry of Current-Voltage Characteristics for High-k Dielectric Capacitor Structures. ECS Transactions,45(3), 151-158. 1938-6737 https://hdl.handle.net/10356/100632 http://hdl.handle.net/10220/11035 10.1149/1.3700881 en ECS transactions © 2012 The Electrochemical Society. This paper was published in ECS Transactions and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/1.3700881]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering Lau, Wai Shing. A new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures
description	Historically, there has been a controversy regarding whether the leakage current versus voltage (I-V) relationship is governed by the Schottky mechanism or by the Poole-Frenkel (P-F) mechanism for several decades. For the P-F mechanism, the I-V characteristics is expected to be symmetrical. In this paper, the author points out that there is an extra mechanism for symmetrical I-V characteristics.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Lau, Wai Shing.
format	Article
author	Lau, Wai Shing.
author_sort	Lau, Wai Shing.
title	A new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures
title_short	A new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures
title_full	A new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures
title_fullStr	A new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures
title_full_unstemmed	A new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures
title_sort	new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures
publishDate	2013
url	https://hdl.handle.net/10356/100632 http://hdl.handle.net/10220/11035
_version_	1681035787715477504

A new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures

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