A new mechanism of symmetry of current-voltage characteristics for high-k dielectric capacitor structures

Historically, there has been a controversy regarding whether the leakage current versus voltage (I-V) relationship is governed by the Schottky mechanism or by the Poole-Frenkel (P-F) mechanism for several decades. For the P-F mechanism, the I-V characteristics is expected to be symmetrical. In this...

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Bibliographic Details
Main Author: Lau, Wai Shing.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/100632
http://hdl.handle.net/10220/11035
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Institution: Nanyang Technological University
Language: English
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Summary:Historically, there has been a controversy regarding whether the leakage current versus voltage (I-V) relationship is governed by the Schottky mechanism or by the Poole-Frenkel (P-F) mechanism for several decades. For the P-F mechanism, the I-V characteristics is expected to be symmetrical. In this paper, the author points out that there is an extra mechanism for symmetrical I-V characteristics.