Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs
Low-temperature 10 K photoluminescence measurements of GaAs1−xNx epitaxial layers grown on GaAs reveal an anomalous second peak in solid-source molecular beam epitaxy. Rapid thermal annealing RTA of a specific GaAsN sample reveals a lower energy peak which redshifts and a higher energy pe...
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Main Authors: | , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/100683 http://hdl.handle.net/10220/17894 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | Low-temperature 10 K photoluminescence measurements of GaAs1−xNx epitaxial layers grown on
GaAs reveal an anomalous second peak in solid-source molecular beam epitaxy. Rapid thermal
annealing RTA of a specific GaAsN sample reveals a lower energy peak which redshifts and
a higher energy peak which blueshifts under increasing annealing temperature. The
band-anticrossing model is used to identify the origins of the two peaks and we propose a model to
explain the RTA observations by the concept of increased confinement in areas of higher N
concentrations by trapped N localized states. The peak is due to the accumulation of N content
near the GaAs/GaAsN interface. Hence, this abnormal annealing behavior occurs in layers with
nonuniform N concentration at the GaAsN/GaAs interface. |
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