Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs

Low-temperature 10 K photoluminescence measurements of GaAs1−xNx epitaxial layers grown on GaAs reveal an anomalous second peak in solid-source molecular beam epitaxy. Rapid thermal annealing RTA of a specific GaAsN sample reveals a lower energy peak which redshifts and a higher energy pe...

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Bibliographic Details
Main Authors: Cheah, Weng Kwong, Fan, Weijun, Yoon, Soon Fatt, Loke, Wan Khai, Liu, R., Wee, A. T. S.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/100683
http://hdl.handle.net/10220/17894
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Institution: Nanyang Technological University
Language: English
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