Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells

Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells

We report observation of transverse electric TE dominant intersubband absorption in Si-doped GaInAsN/GaAs multiple-quantum-well structures. The TE dominant absorption is believed to be caused by the incorporation of nitrogen and the associated nitrogen state. When the confinement is strong in n...

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Bibliographic Details
Main Authors: Fan, Weijun, Yoon, Soon Fatt, Wang, S. Z., Liu, H. C., Zhang, Dao Hua, Liu, W., Sun, L.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/100805
http://hdl.handle.net/10220/18187
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Institution: Nanyang Technological University
Language: English
Description
Summary:We report observation of transverse electric TE dominant intersubband absorption in Si-doped GaInAsN/GaAs multiple-quantum-well structures. The TE dominant absorption is believed to be caused by the incorporation of nitrogen and the associated nitrogen state. When the confinement is strong in narrow quantum wells, the ground state is pushed up, which enhances the interaction with nitrogen state and significantly changes the nature of the state.

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