Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells

Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells

We report observation of transverse electric TE dominant intersubband absorption in Si-doped GaInAsN/GaAs multiple-quantum-well structures. The TE dominant absorption is believed to be caused by the incorporation of nitrogen and the associated nitrogen state. When the confinement is strong in n...

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Main Authors: Fan, Weijun, Yoon, Soon Fatt, Wang, S. Z., Liu, H. C., Zhang, Dao Hua, Liu, W., Sun, L.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/100805
http://hdl.handle.net/10220/18187
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1008052020-03-07T14:00:32Z Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells Fan, Weijun Yoon, Soon Fatt Wang, S. Z. Liu, H. C. Zhang, Dao Hua Liu, W. Sun, L. School of Electrical and Electronic Engineering Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario DRNTU::Engineering::Electrical and electronic engineering We report observation of transverse electric TE dominant intersubband absorption in Si-doped GaInAsN/GaAs multiple-quantum-well structures. The TE dominant absorption is believed to be caused by the incorporation of nitrogen and the associated nitrogen state. When the confinement is strong in narrow quantum wells, the ground state is pushed up, which enhances the interaction with nitrogen state and significantly changes the nature of the state. Published version 2013-12-10T01:49:10Z 2019-12-06T20:28:37Z 2013-12-10T01:49:10Z 2019-12-06T20:28:37Z 2006 2006 Journal Article Zhang, D. H., Liu, W., Sun, L., Fan, W., Yoon, S. F., Wang, S. Z.,& Liu, H. C. (2006). Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells. Journal of applied physics, 99, 043514. 0021-8979 https://hdl.handle.net/10356/100805 http://hdl.handle.net/10220/18187 10.1063/1.2172719 en Journal of applied physics © 2006 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2172719.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 4 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Fan, Weijun
Yoon, Soon Fatt
Wang, S. Z.
Liu, H. C.
Zhang, Dao Hua
Liu, W.
Sun, L.
Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells
description We report observation of transverse electric TE dominant intersubband absorption in Si-doped GaInAsN/GaAs multiple-quantum-well structures. The TE dominant absorption is believed to be caused by the incorporation of nitrogen and the associated nitrogen state. When the confinement is strong in narrow quantum wells, the ground state is pushed up, which enhances the interaction with nitrogen state and significantly changes the nature of the state.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Fan, Weijun
Yoon, Soon Fatt
Wang, S. Z.
Liu, H. C.
Zhang, Dao Hua
Liu, W.
Sun, L.
format Article
author Fan, Weijun
Yoon, Soon Fatt
Wang, S. Z.
Liu, H. C.
Zhang, Dao Hua
Liu, W.
Sun, L.
author_sort Fan, Weijun
title Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells
title_short Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells
title_full Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells
title_fullStr Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells
title_full_unstemmed Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells
title_sort transverse electric dominant intersubband absorption in si-doped gainasn∕gaas quantum wells
publishDate 2013
url https://hdl.handle.net/10356/100805
http://hdl.handle.net/10220/18187
_version_ 1681046040474550272

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