Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells

• المؤلفون الرئيسيون: Fan, Weijun, Yoon, Soon Fatt, Wang, S. Z., Liu, H. C., Zhang, Dao Hua, Liu, W., Sun, L.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100805; http://hdl.handle.net/10220/18187

We report observation of transverse electric TE dominant intersubband absorption in Si-doped GaInAsN/GaAs multiple-quantum-well structures. The TE dominant absorption is believed to be caused by the incorporation of nitrogen and the associated nitrogen state. When the confinement is strong in n...