Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method

• Main Authors: Dang, Y. X., Fan, Weijun, Ng, S. T., Wicaksono, Satrio, Yoon, Soon Fatt, Zhang, Dao Hua
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/100807; http://hdl.handle.net/10220/18005
• Institution: Nanyang Technological University

The effect of annealing on the photoluminescence (PL) in GaAsSbN/GaAs quantum wells QWs grown by solid-source molecular-beam epitaxy has been investigated. The annealing time and temperature are 5 min and 650–750 °C, respectively. Low-temperature (4K) PL peaks shift to higher energies with the annea...