Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method
The effect of annealing on the photoluminescence (PL) in GaAsSbN/GaAs quantum wells QWs grown by solid-source molecular-beam epitaxy has been investigated. The annealing time and temperature are 5 min and 650–750 °C, respectively. Low-temperature (4K) PL peaks shift to higher energies with the annea...
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| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100807 http://hdl.handle.net/10220/18005 |
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| Institution: | Nanyang Technological University |
| Language: | English |