Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005
The photoluminescence of GaAs0.973Sb0.022N0.005 was investigated at different temperatures, pressures, and excitation powers. Both the alloy band edge and the N-cluster emissions, which show different temperature and excitation power dependences, were observed. The pressure coefficients obtained i...
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| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100835 http://hdl.handle.net/10220/18121 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | The photoluminescence of GaAs0.973Sb0.022N0.005 was investigated at different temperatures, pressures, and
excitation powers. Both the alloy band edge and the N-cluster emissions, which show different temperature and
excitation power dependences, were observed. The pressure coefficients obtained in the pressure range of
0–1.4 GPa for the band edge and N-related emissions are 67 and 45 meV/GPa, respectively. The N-cluster
emissions shift to higher energy in the lower pressure range and then begin to redshift at about 8.5 GPa. This
redshift is possibly caused by the increase of the x-valley component in the N-related states with increasing
pressure. A rapid decrease of the emission intensity of the N-related band was also observed when the pressure
exceeded about 8 GPa. |
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