Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005

The photoluminescence of GaAs0.973Sb0.022N0.005 was investigated at different temperatures, pressures, and excitation powers. Both the alloy band edge and the N-cluster emissions, which show different temperature and excitation power dependences, were observed. The pressure coefficients obtained i...

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Bibliographic Details
Main Authors: Ding, K., Wicaksono, Satrio, Ma, B. S., Su, F. H., Wang, W. J., Li, G. H., Yoon, Soon Fatt, Fan, Weijun
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/100835
http://hdl.handle.net/10220/18121
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Institution: Nanyang Technological University
Language: English
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