Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005

• Main Authors: Ding, K., Wicaksono, Satrio, Ma, B. S., Su, F. H., Wang, W. J., Li, G. H., Yoon, Soon Fatt, Fan, Weijun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: Electrical and Electronic Engineering
• Online Access: https://hdl.handle.net/10356/100835; http://hdl.handle.net/10220/18121
• Institution: Nanyang Technological University

The photoluminescence of GaAs0.973Sb0.022N0.005 was investigated at different temperatures, pressures, and excitation powers. Both the alloy band edge and the N-cluster emissions, which show different temperature and excitation power dependences, were observed. The pressure coefficients obtained in the pressure range of 0–1.4 GPa for the band edge and N-related emissions are 67 and 45 meV/GPa, respectively. The N-cluster emissions shift to higher energy in the lower pressure range and then begin to redshift at about 8.5 GPa. This redshift is possibly caused by the increase of the x-valley component in the N-related states with increasing pressure. A rapid decrease of the emission intensity of the N-related band was also observed when the pressure exceeded about 8 GPa.