A 1.2-V 1.5-Gb/s 72-Mb DDR3 SRAM

• المؤلفون الرئيسيون: Cho, Uk Rae, Kim, Tony Tae-Hyoung, Yoon, Yong-Jin, Lee, Jong Cheol, Bae, Dae Gi, Kim, Nam Seog, Kim, Kang Young, Son, Young Jae, Yang, Jeong Suk, Sohn, Kwon Il, Kim, Sung Tae, Lee, In Yeol, Lee, Kwang Jin, Kang, Tae Gyoung, Kim, Su Chul, Ahn, Kee Sik, Byun, Hyun Geun
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100928; http://hdl.handle.net/10220/6438
• المؤسسة: Nanyang Technological University

A 1.2-V 72-Mb double data rate 3 (DDR3) SRAM achieves a data rate of 1.5 Gb/s using dynamic self-resetting circuits [5]. Single-ended main data lines halve the data line...