Mechanism of difficulty to study the physics of leakage current reduction by nitridation of silicon before high-k dielectric deposition due to change in nucleation characteristics and some other factors

• Main Author: Lau, Wai Shing.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/100948; http://hdl.handle.net/10220/11056
• Institution: Nanyang Technological University

It is expected that the leakage current can be reduced by nitridation of silicon before high-k dielectric deposition. In reality, it is not so simple because the nucleation of high-k dielectric on nitrided silicon may be different from the nucleation on silicon. In addition, the interfacial layer be...