Impact of Lanthanum on positive-bias temperature instability - insight from first-principles simulation

• المؤلفون الرئيسيون: Gu, Chen Jie, Ang, Diing Shenp
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Science::Chemistry::Physical chemistry::Electrochemistry
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/101387; http://hdl.handle.net/10220/18410

The impact of lanthanum (La) on positive-bias temperature instability (PBTI) is examined via first-principles simulation of the electronic properties of the oxygen vacancy (VO) and vacancy-interstitial (VO-Oi) paired defects in the hafnium dioxide (HfO2) gate dielectric. The purpose is to understand...