On the evolution of switching oxide traps in the HfO2/TiN gate stack subjected to positive- and negative-bias temperature stressing

• المؤلفون الرئيسيون: Gao, Yuan, Ang, Diing Shenp, Gu, Chen Jie
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Science::Chemistry::Physical chemistry::Electrochemistry
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/101417; http://hdl.handle.net/10220/18411

In this paper, evolution of switching oxide traps (SOTs) in the HfO2/TiN gate stack is examined under positive- and negative-bias temperature (PBT and NBT, respectively) stress. Charging and discharging of SOTs were sensed by repetitive stress/ relaxation cycling and the discharging of SOTs was quan...