On the evolution of switching oxide traps in the HfO2/TiN gate stack subjected to positive- and negative-bias temperature stressing

• Main Authors: Gao, Yuan, Ang, Diing Shenp, Gu, Chen Jie
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2014
• 主題: DRNTU::Science::Chemistry::Physical chemistry::Electrochemistry
• 在線閱讀: https://hdl.handle.net/10356/101417; http://hdl.handle.net/10220/18411

In this paper, evolution of switching oxide traps (SOTs) in the HfO2/TiN gate stack is examined under positive- and negative-bias temperature (PBT and NBT, respectively) stress. Charging and discharging of SOTs were sensed by repetitive stress/ relaxation cycling and the discharging of SOTs was quan...