Simulation of flash memory characteristics based on discrete nanoscale silicon

• المؤلفون الرئيسيون: New, C. L., Khor, T. S., Wong, Jen It, Yang, Ming, Chen, Tupei, Ng, Chi Yung
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/101421; http://hdl.handle.net/10220/6910
• المؤسسة: Nanyang Technological University

In this paper, we present a simulation study on the trapping properties of flash memory device based on discrete nanoscale silicon embedded in silicon-dioxide (SiO2). Taurus Suprem-4 and Taurus Medici are being used to carry out the simulations. The memory structure with a tunnel oxide of 3, 5 and 9...