Simulation of flash memory characteristics based on discrete nanoscale silicon

Simulation of flash memory characteristics based on discrete nanoscale silicon

In this paper, we present a simulation study on the trapping properties of flash memory device based on discrete nanoscale silicon embedded in silicon-dioxide (SiO2). Taurus Suprem-4 and Taurus Medici are being used to carry out the simulations. The memory structure with a tunnel oxide of 3, 5 and 9...

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書目詳細資料
Main Authors:	New, C. L., Khor, T. S., Wong, Jen It, Yang, Ming, Chen, Tupei, Ng, Chi Yung
其他作者:	School of Electrical and Electronic Engineering
格式:	Conference or Workshop Item
語言:	English
出版:	2011
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/101421 http://hdl.handle.net/10220/6910
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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