Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition

• المؤلفون الرئيسيون: Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Science::Physics::Atomic physics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/101819; http://hdl.handle.net/10220/24216

Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaOx layer of ZrO2 grown by atomic layer deposition (ALD) on GaN is studied. ZrO2 films were annealed in N2 atmospheres in temperature range of 300 °C to 700 °C and analyzed by X-ray...