Comment on “Simulation of Schottky and Ohmic contacts on CdTe”
In the present comment, it is argued why the model assumed in [J. Appl. Phys. 109, 014509 (2011)] is inappropriate for the modeling of realistic detector grade semi-insulating CdTe devices. Amendments to the model to account for more realistic physics in devices based on semi-insulating materials ar...
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/101835 http://hdl.handle.net/10220/18786 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | In the present comment, it is argued why the model assumed in [J. Appl. Phys. 109, 014509 (2011)] is inappropriate for the modeling of realistic detector grade semi-insulating CdTe devices. Amendments to the model to account for more realistic physics in devices based on semi-insulating materials are briefly pointed out. |
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