Comment on “Simulation of Schottky and Ohmic contacts on CdTe”

In the present comment, it is argued why the model assumed in [J. Appl. Phys. 109, 014509 (2011)] is inappropriate for the modeling of realistic detector grade semi-insulating CdTe devices. Amendments to the model to account for more realistic physics in devices based on semi-insulating materials ar...

Full description

Saved in:

Bibliographic Details
Main Authors:	Dubecký, František, Dubecký, Matúš
Other Authors:	School of Materials Science & Engineering
Format:	Article
Language:	English
Published:	2014
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Online Access:	https://hdl.handle.net/10356/101835 http://hdl.handle.net/10220/18786
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-101835
record_format	dspace
spelling	sg-ntu-dr.10356-1018352023-07-14T15:46:13Z Comment on “Simulation of Schottky and Ohmic contacts on CdTe” Dubecký, František Dubecký, Matúš School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials In the present comment, it is argued why the model assumed in [J. Appl. Phys. 109, 014509 (2011)] is inappropriate for the modeling of realistic detector grade semi-insulating CdTe devices. Amendments to the model to account for more realistic physics in devices based on semi-insulating materials are briefly pointed out. Published version 2014-02-12T03:42:30Z 2019-12-06T20:45:17Z 2014-02-12T03:42:30Z 2019-12-06T20:45:17Z 2012 2012 Journal Article Dubecký, F., & Dubecký, M. (2012). Comment on “Simulation of Schottky and Ohmic contacts on CdTe”. Journal of Applied Physics, 111(2), 026102-. 0021-8979 https://hdl.handle.net/10356/101835 http://hdl.handle.net/10220/18786 10.1063/1.3676282 en Journal of applied physics © 2012 American Institute of Physics. This paper was published in Journal Of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3676282]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Dubecký, František Dubecký, Matúš Comment on “Simulation of Schottky and Ohmic contacts on CdTe”
description	In the present comment, it is argued why the model assumed in [J. Appl. Phys. 109, 014509 (2011)] is inappropriate for the modeling of realistic detector grade semi-insulating CdTe devices. Amendments to the model to account for more realistic physics in devices based on semi-insulating materials are briefly pointed out.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Dubecký, František Dubecký, Matúš
format	Article
author	Dubecký, František Dubecký, Matúš
author_sort	Dubecký, František
title	Comment on “Simulation of Schottky and Ohmic contacts on CdTe”
title_short	Comment on “Simulation of Schottky and Ohmic contacts on CdTe”
title_full	Comment on “Simulation of Schottky and Ohmic contacts on CdTe”
title_fullStr	Comment on “Simulation of Schottky and Ohmic contacts on CdTe”
title_full_unstemmed	Comment on “Simulation of Schottky and Ohmic contacts on CdTe”
title_sort	comment on “simulation of schottky and ohmic contacts on cdte”
publishDate	2014
url	https://hdl.handle.net/10356/101835 http://hdl.handle.net/10220/18786
_version_	1772826274009448448

Comment on “Simulation of Schottky and Ohmic contacts on CdTe”

Similar Items