Comment on “Simulation of Schottky and Ohmic contacts on CdTe”

• Main Authors: Dubecký, František, Dubecký, Matúš
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: https://hdl.handle.net/10356/101835; http://hdl.handle.net/10220/18786
• Institution: Nanyang Technological University

In the present comment, it is argued why the model assumed in [J. Appl. Phys. 109, 014509 (2011)] is inappropriate for the modeling of realistic detector grade semi-insulating CdTe devices. Amendments to the model to account for more realistic physics in devices based on semi-insulating materials ar...