Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications

Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications

This paper presents a novel nano-electro-mechanical (NEM) non-volatile memory (NVM) based on an anchorless structure for high operating temperature (>;200°C). The proposed NEM NVM device has two stable mechanical states obtained by adhesion forces, and is actuated by electrostatic forces. This wo...

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Main Authors: Vaddi, Ramesh, Kim, Tony Tae-Hyoung, Pott, Vincent, Lin, Julius Tsai Ming
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/102307
http://hdl.handle.net/10220/16376
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1023072020-03-07T13:24:51Z Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications Vaddi, Ramesh Kim, Tony Tae-Hyoung Pott, Vincent Lin, Julius Tsai Ming School of Electrical and Electronic Engineering IEEE International Reliability Physics Symposium (2012 : Anaheim, California, US) DRNTU::Engineering::Electrical and electronic engineering This paper presents a novel nano-electro-mechanical (NEM) non-volatile memory (NVM) based on an anchorless structure for high operating temperature (>;200°C). The proposed NEM NVM device has two stable mechanical states obtained by adhesion forces, and is actuated by electrostatic forces. This work further discusses the modeling of the NEM memory device and the scaling effects on the device performance. Finally, a memory cell consisting of the NEM memory device and two MOS transistors (1NEM-2T), and NEM NVM array structure are presented. Accepted version 2013-10-10T04:38:43Z 2019-12-06T20:53:07Z 2013-10-10T04:38:43Z 2019-12-06T20:53:07Z 2012 2012 Conference Paper Vaddi, R., Kim, T. T., Pott, V., & Lin, J. T. M. (2012). Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications. 2012 IEEE International Reliability Physics Symposium (IRPS), pp.ME.3.1-ME.3.6. https://hdl.handle.net/10356/102307 http://hdl.handle.net/10220/16376 10.1109/IRPS.2012.6241917 en © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at DOI: [http://dx.doi.org/10.1109/IRPS.2012.6241917]. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Vaddi, Ramesh
Kim, Tony Tae-Hyoung
Pott, Vincent
Lin, Julius Tsai Ming
Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications
description This paper presents a novel nano-electro-mechanical (NEM) non-volatile memory (NVM) based on an anchorless structure for high operating temperature (>;200°C). The proposed NEM NVM device has two stable mechanical states obtained by adhesion forces, and is actuated by electrostatic forces. This work further discusses the modeling of the NEM memory device and the scaling effects on the device performance. Finally, a memory cell consisting of the NEM memory device and two MOS transistors (1NEM-2T), and NEM NVM array structure are presented.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Vaddi, Ramesh
Kim, Tony Tae-Hyoung
Pott, Vincent
Lin, Julius Tsai Ming
format Conference or Workshop Item
author Vaddi, Ramesh
Kim, Tony Tae-Hyoung
Pott, Vincent
Lin, Julius Tsai Ming
author_sort Vaddi, Ramesh
title Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications
title_short Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications
title_full Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications
title_fullStr Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications
title_full_unstemmed Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications
title_sort design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications
publishDate 2013
url https://hdl.handle.net/10356/102307
http://hdl.handle.net/10220/16376
_version_ 1681045718361440256

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