Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film
A write-once-read-many-times (WORM) memory devices based on O2 plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2 V is ∼109 Ω for a...
Saved in:
Main Authors: | , , , , , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2014
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/102339 http://hdl.handle.net/10220/18991 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Be the first to leave a comment!