Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film

• Main Authors: Chen, Tupei, Liu, Pan, Li, X. D., Liu, Z., Wong, J. I., Liu, Y., Leong, K. C.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/102339; http://hdl.handle.net/10220/18991
• Institution: Nanyang Technological University

A write-once-read-many-times (WORM) memory devices based on O2 plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2 V is ∼109 Ω for a...