Effect of nickel silicide induced dopant segregation on vertical silicon nanowire diode performance

• المؤلفون الرئيسيون: Tan, Chuan Seng, Lu, W., Pey, K. L., Singh, N., Leong, K. C., Liu, Q., Gan, C. L., Lo, G. Q., Kwong, D. -L.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/103474; http://hdl.handle.net/10220/19235
• المؤسسة: Nanyang Technological University

In this work, Dopant Segregated Schottky Barrier (DSSB) and Schottky Barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated on p-type Si substrate using CMOS-compatible processes to investigate the effects of segregated dopants at the silicide/silicon interface and different annealing...