TSV-less 3D stacking of MEMS and CMOS via low temperature Al-Au direct bonding with simultaneous formation of hermetic seal
3D integration has been widely recognized as the next generation of technology for integrated microsystems with small form factor, high bandwidth, low power consumption, and possibility of heterogeneous More-than-Moore integration. Heterogeneous integration of MEMS and CMOS is critical in future dev...
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sg-ntu-dr.10356-1036142020-03-07T13:24:51Z TSV-less 3D stacking of MEMS and CMOS via low temperature Al-Au direct bonding with simultaneous formation of hermetic seal Tan, Chuan Seng Razzaq, A. Wee, K. H. Li, K. H. Yu, H. Chua, S. L. School of Electrical and Electronic Engineering IEEE Electronic Components and Technology Conference (ECTC) (64th : 2014) DRNTU::Engineering::Electrical and electronic engineering::Electronic systems 3D integration has been widely recognized as the next generation of technology for integrated microsystems with small form factor, high bandwidth, low power consumption, and possibility of heterogeneous More-than-Moore integration. Heterogeneous integration of MEMS and CMOS is critical in future development of multi-sensor data fusion in a low-cost chip size system. MEMS/CMOS integration was primarily done using monolithic and hybrid/package approaches until recently. In this work, 3D CMOS-on-MEMS stacking without TSV using direct (i.e. solder-less) metal bonding is demonstrated. This MEMS/CMOS integration leads to a simultaneous formation of electrical, mechanical, and hermetic bonds, eliminates chip-to-chip wire-bonding, and hence presents competitive advantages over hybrid or monolithic solutions. We present the fabrication flow and verify the performance of the stacked MEMS/CMOS microsystem in this paper. Accepted version 2014-12-26T06:16:11Z 2019-12-06T21:16:19Z 2014-12-26T06:16:11Z 2019-12-06T21:16:19Z 2014 2014 Conference Paper Chua, S.L., Razzaq, A., Wee, K.H., Li, K.H., Yu, H., & Tan, C.S. (2014). TSV-less 3D stacking of MEMS and CMOS via low temperature Al-Au direct bonding with simultaneous formation of hermetic seal. IEEE Electronic Components and Technology Conference (ECTC) (64th : 2014), 324 - 331. https://hdl.handle.net/10356/103614 http://hdl.handle.net/10220/24544 10.1109/ECTC.2014.6897306 en © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/ECTC.2014.6897306]. 8 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Electronic systems Tan, Chuan Seng Razzaq, A. Wee, K. H. Li, K. H. Yu, H. Chua, S. L. TSV-less 3D stacking of MEMS and CMOS via low temperature Al-Au direct bonding with simultaneous formation of hermetic seal |
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3D integration has been widely recognized as the next generation of technology for integrated microsystems with small form factor, high bandwidth, low power consumption, and possibility of heterogeneous More-than-Moore integration. Heterogeneous integration of MEMS and CMOS is critical in future development of multi-sensor data fusion in a low-cost chip size system. MEMS/CMOS integration was primarily done using monolithic and hybrid/package approaches until recently. In this work, 3D CMOS-on-MEMS stacking without TSV using direct (i.e. solder-less) metal bonding is demonstrated. This MEMS/CMOS integration leads to a simultaneous formation of electrical, mechanical, and hermetic bonds, eliminates chip-to-chip wire-bonding, and hence presents competitive advantages over hybrid or monolithic solutions. We present the fabrication flow and verify the performance of the stacked MEMS/CMOS microsystem in this paper. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Tan, Chuan Seng Razzaq, A. Wee, K. H. Li, K. H. Yu, H. Chua, S. L. |
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Conference or Workshop Item |
author |
Tan, Chuan Seng Razzaq, A. Wee, K. H. Li, K. H. Yu, H. Chua, S. L. |
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Tan, Chuan Seng |
title |
TSV-less 3D stacking of MEMS and CMOS via low temperature Al-Au direct bonding with simultaneous formation of hermetic seal |
title_short |
TSV-less 3D stacking of MEMS and CMOS via low temperature Al-Au direct bonding with simultaneous formation of hermetic seal |
title_full |
TSV-less 3D stacking of MEMS and CMOS via low temperature Al-Au direct bonding with simultaneous formation of hermetic seal |
title_fullStr |
TSV-less 3D stacking of MEMS and CMOS via low temperature Al-Au direct bonding with simultaneous formation of hermetic seal |
title_full_unstemmed |
TSV-less 3D stacking of MEMS and CMOS via low temperature Al-Au direct bonding with simultaneous formation of hermetic seal |
title_sort |
tsv-less 3d stacking of mems and cmos via low temperature al-au direct bonding with simultaneous formation of hermetic seal |
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2014 |
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https://hdl.handle.net/10356/103614 http://hdl.handle.net/10220/24544 |
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1681045342997446656 |